1. ECR plasma etching of GaS in CCl2F2/Ar/O2 discharge and IR studies of the etched surface L.S.S.Singh, K.P.Tiwary, R.K.Purohit, Z.H.Zaidi, M.Husain Current Applied Physics (In Press) (2004)
  2. High field conduction mechanism and dielectric properties of Se78-xTe22Bix alloys, M. A. Majeed Khan, M. Zulfequar & M. Husain Physica B, (In Press) (2004).
  3. Conduction Mechanism in a-Se75In25-xPbx films, M. A. Majeed Khan, M. Zulfequar, A. Kumar & M. Husain, Journal of Materials Chemistry & Physics , (In Press) (2004).
  4. CdS sintered films: growth and characteristics, Monika Sharma, Sushil Kumar, L.M.Sharma, T.P.Sharma, M.Husain, Physics B, (In Press) (2004).
  5. Study of density of localized states in a-GaxSe100-x alloys using SCLC measurements., Shagufta B. Husain, M. Zulfequar, M. A. Majeed Khan, M. Husain, Current Applied Physics, (In Press) (2004).
  6. X-ray investigation of solid solution partitioning in 2.25Cr-1Mo steel after extended elevated temperature service in power station. Material Science and Technology, Vol.19 (2003)., V. Jayan, M. Y. Khan and M. Husain
  7. Studies on vacuum evaporated PbS1-xSex thin films, Sushil Kumar, M. A. Majeed Khan, Shamshad A. Khan and M. Husain Journal of Optical Materials, 25 (2004) 25-32
  8. Laser-induced Amorphization and Crystallization on Se80Te20-xPbx thin films., Shamshad A. Khan, M. Zulfequar, M. Husain, Vacuum 72 (2004) 291-296.
  9. The Activation energy and the Avrami exponent for Crystallization in a-Bi0.5Se99.5-xZnx glasses, Shamshad A. Khan, M. Zulfequar, M. Husain, Current Applied Physics, 3 (2003) 337-343.
  10. Studies of density of localized states of a-Se80Te20-xPbx films by space charge limited conduction measurements, M.A.Majeed Khan, M.Zulfequar, M. Husain, Materials Letters 57 (2003) 2894-2900
  11. Catalytic hydrogenation for improvement of GaAs/Ge solar cell efficiency, R. Tyagi, M. Bal, M. Singh, T. Halder, M. Husain and S. K. Agrawal, Solar Energy Material and Solar cells, (USA) 76 (2003) 257-261.
  12. Effect of annealing on the optical band gap of a- Ga5Se100-xSbx during crystallization., Shamshad A. Khan, M. Zulfequar & M. Husain, Journal of Modern Optics (U.K.) 50 (2003) 51-62.
  13. Optical bandgap and optical constants of a-Se100-xSbx thin films., M. A. Majeed Khan, M. Zulfequar & M. Husain, Journal of Modern Optics (U.K.) 50 (2003) 251-263.
  14. Electrical transport properties of amorphous Se78-xTe22Bix films, M.A.Majeed Khan, M.Zulfequar, M Husain, Journal of Materials Science 38 (2003) 549-554.
  15. Space Charge Limited Conduction in a-Bi0.5Se99.5-xZnx films., M. A. Majeed Khan, M. Zulfequar and M. Husain, Material Science Letter , (USA) 38 (2003) 549-554
  16. Optical, Electrical and Structural Investigation on Cd1-xZnxSe Sintered Films for Photovoltaic Applications, M. Husain, Beer Pal Singh, Sushil Kumar, T. P. Sharma and P.J. Sebastian, Solar Energy Material and Solar cells, (USA) 76 (2003) 399-415
  17. Optical Investigation of a-Se8100-xBix films., M. A. Majeed Khan, M. Zulfequar and M. Husain, J. of Optical Material, (USA) 22 (2002) 21
  18. Low Temperature Hoping conduction of a-Ga5Se95-xSbx thin films., M. A. Majeed Khan, M. Zulfequar and M. Husain, Solid State Communication , (UK) 125 (2003) 213
  19. Characterization of PbSe1-xTex thin films, Sushil Kumar, T. P. Sharma, Muzammil Husain & M. Husain, J. Phys. & Chem. of Solids, (U.S.A) 64 (2003) 367-376
  20. Characterization of vacuum evaporated PbS thin films., Sushil Kumar, T. P. Sharma, M. Zulfequar & M. Husain, Physica B Netherland, 325 (2002) 8-16.
  21. Effect of annealing on crystallization process in amorphous Ge5Se95-xTex thin films, Shamshad A. Khan, M. Zulfequar, M. Husain, Physica ‘B’, Netherland 324 (2002) 336.
  22. Electrical Conduction mechanism in Amorphous Se80In20-xPbx films., M. A. Majeed Khan, M. Zulfequar and M. Husain, Current Applied Physics, (USA) 2 (2002) 401.
  23. Optical and Electrical properties of glassy Ga10Te90-xSbx alloys., Shamshad A. Khan, M. Zulfequar, M. Ilyas, Zishan H. Khan and M. Husain, Journal of Optical Material, (USA) 20 (2002) 189.
  24. Estimation of density of localized states of a-Se100-xBix films from electrical properties., M. A. Majeed Khan, M. Zulfequar, & M. Husain, Physica B, Netherland, 322 (2002) 1.
  25. On the crystallization kinetics of amorphous Se80In20-xPbx ., Shamshad A. Khan, M. Zulfequar, M. Husain, Solid State Communication, (UK) 123, Issue 10 (2002) 463-468.
  26. Investigation of Crystallisation Kinetics of Bi0.5Se99.5-xZnx glasses by differential scanning calorimetry., S.A Khan, M.Zulfequar and M.Husain, Material Science and Technology August 2002, Vol. 18
  27. Crystallization Kinetics and optical band gap studies of Se96In4 glass before and after slow neutron irradiation, Mousa M. A. Imran, N. S. Saxena, Y. K. Vijay, N. B. Maharjan and M. Husain, J. of Non-Crystalline Solids , (USA) 298 (2002) 53-59.
  28. Crystallization Kinetics of Ga5Se95-xSbx., Shamshad A. Khan, M. Zulfequar & M. Husain, J. Phys. & Chem. of Solids, (USA) 63 (2002) 1787-1796.
  29. Kinetics of Crystallization in a- Se80In20-xPbx under isothermal annealing: Activation Energy Determination, S. A. Khan, M. Zulfequar & M. Husain, Journal of Materials Science Letter, (USA) 21 (2002) 1085-1088.
  30. Electrical and Thermal Properties of a–(Se70Te30)100-x(Se98Bi2)x(0≤x≤20) alloys., Zishan.H.Khan, M.Zulfequar, M.Ilyas, M.Husain, Kh.Selima Begum, Current Applied Physics 2 (2002), 167-174.
  31. High Pressure band structure and structural stability of EuTe., Dhrambir Singh, Vipul Srivastva, M. Rajgopalan, M. Husain & A. K. Bandyopadhyay, Physical Review B, (U.S.A) 64, (2000) 110-115
  32. High pressure band structures and structural stability of EuS., D. Singh, M. Rajagopalan, M. Husain & A. K. Bandyopadhyay, Solid State Commun., (UK) 115 , 323 (2000).
  33. Estimation of density of localized states of a-Se100-xSbx films using electrical properties., M. A. Majeed Khan, M. Zulfequar, & M. Husain, J. Phys. & Chem. of Solids, 62 (U.S.A) (2001) 1093-1101.
  34. Glass Transition Phenomena, Crystallization Kinetics and Enthalpy Released in Binary Se100-xInx ( x = 2, 4 and 10) semiconducting glases., Mousa M. A. Imran, N. S. Saxena, D. Bhandari and M. Husain, Physica Stat. Sol. (a), Germany, 181 (2000)
  35. Electrical Conductivity and Thermoelectric Power of a-Se80-xGa20Tex (x=0,5,10,15 and 20) Thin Films., Zishan H. Khan, M. Zulfequar, M. Ilyas & M. Husain, Acta Physica Polonica, A (Poland) 98 No. 1-2 93 (2000).
  36. Electrical conductivity and thermoelectric power of a-Se80-xInx and Se80-xGe20Inx thin films., Zishan H. Khan, M. Zulfequar, Arvind Kumar & M. Husain, Can.J.Phys. 79 (2001)
  37. CdTe Photovoltaic Sintered Films., Sushil Kumar, S. K. Sharma, T. P. Sharma & M. Husain, J. Phys. & Chem. of Solids, (U.S.A) 61, 1809 (2000).
  38. Kinetics Studies of Bulk Se85-xTe15Sbx Glasses with x = 0, 2, 4, 6, 8 & 10, N. B. Maharjan, D. Bhandari, N. S. Saxena, D. D. Paudiyal and M. Husain, Phys. Stat. Sol. (a) (Germany) 178 663 (2000)
  39. Optical investigation of a-GaxSe100-x thin films., M. Ilyas, M. Zulfequar and M. Husain., Journal of Modern Optics (UK), 47 No. 4 (2000) 663.
  40. Optical Properties of a-(Se70Te30)100-x(Se98Te2) x thin films., M. Ilyas, M. Zulfequar and M. Husain., J. Optical Materials (USA) 13 (2000) 397.
  41. Anomalous Dielectric behaviour in a-GaxTe100-x alloys (0≤x≤10), M. Ilyas, M. Zulfequar and M. Husain., Physica B (The Netherlands), 271, (1999) 125-135.
  42. Dielectric Properties of a-GaxSe100-x alloys (0≤x≤10)., M. Ilyas, M. Zulfequar, Zishan H. Khan and M. Husain., Physica B (The Netherlands), 254 (1998) 57-69.
  43. Optical band gap and optical constants in a-GaxTe100-x thin films., M. Ilyas, M. Zulfequar, Zishan H. Khan and M. Husain., J. Optical Materials (USA) 11 (1998) 67-77.
  44. a-Ga40Se60: A Material for photovoltaic applications., Solar Energy Materials and Solar Cell (USA) 55 (1998) 11-14., M. Husain, Zishan H. Khan and P. K. Bhatnagar.
  45. Effect on Sb on Transport Properties of a-Se80-xGa20Sbx Thin Films., Jap. J. Applied Physics (Japan) 37 (1998) 23-28, Zishan H. Khan, M. Zulfequar, M. Manzar Malik and M. Husain
  46. Optical Properties of a-Se80-xGa20Tex Thin Films., J. Optics (U.K.) 28 (1997) 151-157, Zishan H. Khan, M. Zulfequar & M. Husain
  47. Electrical transport properties of thin films of a-Se80-xGa20Bix., Materials Science & Technology (U.K.) 13 No. 6 484-489 (1997), Zishan H. Khan, M. Zulfequar, M. Manzar Malik & M. Husain
  48. Optical Properties of amorphous-Se80-xGa20Bix Thin Films., J. Modern Optics (U.K.) 44 55-68 (1997), Zishan H. Khan, M. Zulfequar & M. Husain
  49. Electrical Transport Properties of Glassy Semiconducting Se70-xGa30Tex. Mat. Sci. Forum (Switzerland) 223-224 275 (1996)., M. Manzar Malik, Zishan H. Khan & M. Husain.
  50. Optical Studies of a-Se80-xGa20Bix Thin Films., Mat. Sci. Forum (Switzerland) 223-224 165 (1996), Zishan H. Khan, M. Ilyas & M. Husain
  51. Optical Properties of a-Se80-xGa20Sbx Thin Films., J. Optical Materials (USA) 6 139 (1996)., Zishan H. Khan, M. Zulfequar, T. P. Sharma & M. Husain
  52. Electrical Conduction Mechanism in a-Se80-xGa20Tex Films., J. Physics; Condensed Matter (U.K.) 7 8979-91 (1995), Zishan H. Khan, M. Manzar Malik, M. Zulfequar & M. Husain
  53. Effect of Ag on the X-ray K-absorption Edge of Glassy Ga30Se70., J. Non-Crystt. Solids (USA) 170 312 (1994), M. Manzar Malik & M. Husain
  54. Effect of Indium impurity on the electrical properties of amorphous-Ga30Se70-x., J. Physics; Condensed Matter (U.K.) 4 8331 (1992)., M. Manzar Malik, M. Zulfequar, Arvind Kumar & M. Husain
  55. X-ray K-absorption Edge Studies in a-Ga30Se70 and a-Ga30Se70-xInx., X-ray Spectrometry (USA) 21 193 (1992), M. Manzar Malik, A. N. Nigam & M. Husain
  56. Characterization of Materials by Chemical Shift of X-ray Absorption Edges., X-ray Spectrometry (USA) 21 83 (1992), M. Husain & Alka Narula.
  57. Electrical Conductivity of a-Ga30Se70-xMx., Physics Letters A (USA) 158 475 (1991), M. Manzar Malik, M. Zulfequar & M. Husain
  58. Electrical Conductivity and Thermo-electric Power in Se80-xTe20Inx., Solid State Communication (UK) 79 699 (1991), Arvind Kumar, M. Manzar Malik, M. Zulfeqaur & M. Husain
  59. Correlation between X-ray absorption edge shift and Fermi energy, Revistica Maxicana de Fisica (Maxico) 37 97 (1991), M. Husain, Alka Batra, Arvind Kumar & M. Manzar Malik
  60. Structural Studies of Glassy Semiconducting Se80-xTe20Inx Alloys., X-ray Spectrometry (USA) 19 243 (1990), Arvind Kumar, M. Husain, S. Swaroop, A. N. Nigam & A. Kumar
  61. X-ray Spectroscopic Studies in Glassy Semiconducting Ga20Se80 and Ga20Se80-xInx Alloys., Physica B (Netherland) 162 177 (1990), Arvind Kumar, M. Husain, S. Swaroop, A. N. Nigam & A. Kumar
  62. On the Localization of Charge Carriers and Surpression of Superconductivity by praseodymium in systems derived from YBa2Cu3O7d., Physica C (Netherland) 167 640 (1990), C. Infante, M. K. E. L. Mously, M. Husain, S. A. Siddiqqui & P. Ganguly
  63. Study of K-absorption edge of Selenium in Glassy Semiconducting Se80-xInx system., X-ray Spectrometry (USA) 9 27 (1990), Arvind Kumar, M. Husain, S. Swaroop, A. N. Nigam & A. Kumar
  64. Effect of Chemical Combination on X-ray Absorption Edges of Ternary Compound., Physica B (Netherland) 160 125 (1989), M. Husain, Alka Batra & K. S. Srivastava
  65. Electronegativity Scale from X-ray Photoelectron Spectroscopic Data., Polyhedron (UK) 8 1233 (1989), M. Husain, Alka Batra & K. S. Srivastava
  66. Electronegativity and Chemical Shift of X-ray Absorption Edges., Oriental J. Chem. (India) 3 186 (1987), M. Husain, I. A. Khan & K. S. Srivastava
  67. Value of Coupling Constant for Plasmon Oscillations in Solids., J. Sci. Res. (India) 7 87 (1986), J. P. Goel, M. Husain & O. K. Harsh
  68. Collective Oscillations during X-ray Plasmon Scattering., J. Sci. Res. (India) 1 35 (1985), O. K. Harsh, K. C. M. Shukla, J. P. Goel & M. Husain
  69. Critical Limit of Plasmon excitations in metals., Oriental J. Chem. (India) 1 11 (1985), O. K. Harsh, K. C. M. Shukla & M. Husain
  70. Calculation of the chemical shifts of the X-ray absorption edges., Ind. J. Physics (India) 58A 207 (1984), K. S. Srivastava, M. Husain, A. K. Srivastava, V. Kumar, K. Sinha & A. Chaube
  71. Calculation of the chemical shifts of the X-ray absorption edges., Acta Physica Polonica (Poland) A65 53 (1984), K. S. Srivastava, K. Sinha, M. Husain & A. Tondon
  72. Shift in the X-ray absorption edges of transition elements., J. Sci. Res. (India) 5 183 (1983), M. Husain, I. A. Khan & K. S. Srivastava
  73. Excitation energy dependent features in X-ray emission spectrum of Cerium., Ind. J. Pure & Applied Physics (India) 21 615 (1983), K. S. Srivastava, K. Sinha, A. K. Srivastava & M. Husain
  74. Electron-electron interaction in the X-ray emission spectrum of Cerium., Ind. J. Pure and Appl. Physics (India) 21 256 (1983), K. S. Srivastava, A. K. Srivastava, K. Sinha, M. Husain & S. Singh
  75. Correlation of electron binding energy with the chemical shifts., Ind. J. Physics (India) 57B 71 (1983), K. S. Srivastava, A. Chaube, K. Sinha, A. Tondon & M. Husain
  76. Chemical Shift of the X-ray K or L absorption edges., Chemical Science (India) 91 385 (1982), K. S. Srivastava, M. Husain, K. Sinha, P. Gupta, V. Kumar & S. Singh
  77. High Energy Double Plasmon Satellites in X-ray Emission Spectra of Cr and Fe., Current Science (India) 50 795 (1981), K. S. Srivastava, O. K. Harsh, V. Kumar, M. Husain & S. Singh
  78. X-ray K-absorption edge shifts due to chemical combination., Pranama (India) 17 197 (1981),K. S. Srivastava, S. Singh, A. K. Srivastava, M. Husain & M. K. Prasad
  79. Shift in binding energy of the inner electrons due to chemical combination., Phys. Stat. Sol. (b) (Germany) 108 575 (1981), K. S. Srivastava, M. Husain, P. Gupta, A. K. Srivastava, K. Sinha & S. Singh